IQEH50NE2LM7UCGSCATMA1 vs IQDH29NE2LM5CGSCATMA1 Vergleich
Detaillierter Direktvergleich von IQEH50NE2LM7UCGSCATMA1 von Infineon und IQDH29NE2LM5CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQEH50NE2LM7UCGSCATMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,78 | $1,84 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 25 V | — |
| Continuous Drain Current (ID) at TA | 54 A | — |
| Continuous Drain Current (ID) at TC | 422 A | — |
| RDS(on) Max | 0.5 mΩ | — |
| Gate Threshold Voltage (VGS(th)) typ | 2 V | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 150 W | — |
| Maximum Junction Temperature | 175 °C | — |
| Gehäuse | PG-WHTFN-9-1 (surface mount) | PG-WHTFN-9-U02 (WHTFN EP) |
| Montageart | Surface Mount | Surface Mount |
| Series | OptiMOS 7 | — |
| Technology | Silicon N-Channel Power MOSFET | OptiMOS 5 Power-Transistor |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (Ta) | — | 75 A |
| Continuous Drain Current (Tc) | — | 789 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 278 W |
| Maximum On-Resistance RDS(on) | — | 0.29 mΩ |
| Gate Threshold Voltage VGS(th) | — | 2 V (typ) |
| Pin-Anzahl | — | 9 |
| Cooling | — | Dual-side exposed pad (top + bottom) |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |
| RoHS-Status | — | Compliant |