IQEH50NE2LM7UCGSCATMA1 vs IQDH29NE2LM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQEH50NE2LM7UCGSCATMA1 by Infineon and IQDH29NE2LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 β ActiveInfineon
IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΞ© MOSFET | Infineon
IQDH29NE2LM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQEH50NE2LM7UCGSCATMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.78 | $1.84 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 7 Power-Transistor | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) Max | 25 V | β |
| Continuous Drain Current (ID) at TA | 54 A | β |
| Continuous Drain Current (ID) at TC | 422 A | β |
| RDS(on) Max | 0.5 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) typ | 2 V | β |
| Power Dissipation (PD) at TA | 2.5 W | β |
| Power Dissipation (PD) at TC | 150 W | β |
| Maximum Junction Temperature | 175 Β°C | β |
| Package | PG-WHTFN-9-1 (surface mount) | PG-WHTFN-9-U02 (WHTFN EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Series | OptiMOS 7 | β |
| Technology | Silicon N-Channel Power MOSFET | OptiMOS 5 Power-Transistor |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 25 V |
| Continuous Drain Current (Ta) | β | 75 A |
| Continuous Drain Current (Tc) | β | 789 A |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 278 W |
| Maximum On-Resistance RDS(on) | β | 0.29 mΞ© |
| Gate Threshold Voltage VGS(th) | β | 2 V (typ) |
| Pin Count | β | 9 |
| Cooling | β | Dual-side exposed pad (top + bottom) |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| RoHS Status | β | Compliant |