IQEH50NE2LM7UCGSCATMA1 vs IQE008N03LM5CGSCATMA1 Vergleich
Detaillierter Direktvergleich von IQEH50NE2LM7UCGSCATMA1 von Infineon und IQE008N03LM5CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 ✓ AktivInfineon
IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
IQE008N03LM5CGSCATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQEH50NE2LM7UCGSCATMA1 | IQE008N03LM5CGSCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,78 | $2,10 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | OptiMOS 5 |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 25 V | 30 V |
| Continuous Drain Current (ID) at TA | 54 A | — |
| Continuous Drain Current (ID) at TC | 422 A | — |
| RDS(on) Max | 0.5 mΩ | — |
| Gate Threshold Voltage (VGS(th)) typ | 2 V | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 150 W | — |
| Maximum Junction Temperature | 175 °C | — |
| Gehäuse | PG-WHTFN-9-1 (surface mount) | PG-WHTFN-9 (WHTFN) |
| Montageart | Surface Mount | Surface Mount (top + bottom cooling) |
| Series | OptiMOS 7 | — |
| Technology | Silicon N-Channel Power MOSFET | Trench MOSFET (OptiMOS 5) |
| Configuration | — | Dual N-Channel MOSFET Array |
| Continuous Drain Current (ID) Max | — | 252 A (per channel, case-temperature limited) |
| On-Resistance (RDS(on)) Max | — | 0.85 mOhm at VGS = 10 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS maximum rating] |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (typ) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Betriebstemperaturbereich | — | -55C to +150C (junction) |
| Polarity | — | N-Channel |
| Anzahl der Pins | — | 9 (WHTFN with exposed thermal pads) |
| MSL-Level | — | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) |
| RoHS-Status | — | Compliant |
| Halogenfrei | — | Yes (Infineon standard for OptiMOS 5) |