IQEH50NE2LM7ZCGATMA1 vs IQEH46NE2LM7UCGSCATMA1 Vergleich
Detaillierter Direktvergleich von IQEH50NE2LM7ZCGATMA1 von Infineon und IQEH46NE2LM7UCGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ AktivInfineon
IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon
IQEH46NE2LM7UCGSCATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQEH50NE2LM7ZCGATMA1 | IQEH46NE2LM7UCGSCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,42 | $1,65 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Polarity / Channel Type | N-Channel | Single N-Channel |
| Drain-Source Voltage (Vds) Max | 25 V | — |
| Continuous Drain Current (Ta) | 54 A | — |
| Continuous Drain Current (Tc) | 422 A | — |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 150 W | — |
| Maximum Junction Temperature | +175 degrees C | — |
| Betriebstemperaturbereich | -55 degrees C to +175 degrees C | — |
| Gehäuse | PG-TTFN-9-3 | PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | OptiMOS 7 (trench) |
| RoHS-Status | Compliant | Compliant |
| Qualification | Industrial grade per Infineon datasheet | — |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TC | — | 440 A |
| Continuous Drain Current (ID) at TA | — | 57 A |
| Power Dissipation at TA | — | 2.5 W |
| Power Dissipation at TC | — | 150 W |
| Maximum On-Resistance (RDS(on)) | — | 0.46 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Operating Mode | — | Enhancement-mode |
| Topology Suitability | — | Hard- and soft-switching |