IQEH50NE2LM7ZCGATMA1 vs IQEH46NE2LM7UCGSCATMA1 对比
详细并排对比 IQEH50NE2LM7ZCGATMA1 出自 Infineon 和 IQEH46NE2LM7UCGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ 量产中规格对比
| 参数 | IQEH50NE2LM7ZCGATMA1 | IQEH46NE2LM7UCGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.42 | $1.65 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Polarity / Channel Type | N-Channel | Single N-Channel |
| Drain-Source Voltage (Vds) Max | 25 V | — |
| Continuous Drain Current (Ta) | 54 A | — |
| Continuous Drain Current (Tc) | 422 A | — |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 150 W | — |
| Maximum Junction Temperature | +175 degrees C | — |
| 工作温度范围 | -55 degrees C to +175 degrees C | — |
| 封装 | PG-TTFN-9-3 | PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | OptiMOS 7 (trench) |
| RoHS 状态 | Compliant | Compliant |
| Qualification | Industrial grade per Infineon datasheet | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TC | — | 440 A |
| Continuous Drain Current (ID) at TA | — | 57 A |
| Power Dissipation at TA | — | 2.5 W |
| Power Dissipation at TC | — | 150 W |
| Maximum On-Resistance (RDS(on)) | — | 0.46 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Operating Mode | — | Enhancement-mode |
| Topology Suitability | — | Hard- and soft-switching |