IQEH50NE2LM7ZCGATMA1 vs IQEH46NE2LM7UCGSCATMA1 Comparación
Comparación detallada lado a lado de IQEH50NE2LM7ZCGATMA1 por Infineon y IQEH46NE2LM7UCGSCATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ ActivoInfineon
IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon
IQEH46NE2LM7UCGSCATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQEH50NE2LM7ZCGATMA1 | IQEH46NE2LM7UCGSCATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,42 | $1,65 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Polarity / Channel Type | N-Channel | Single N-Channel |
| Drain-Source Voltage (Vds) Max | 25 V | — |
| Continuous Drain Current (Ta) | 54 A | — |
| Continuous Drain Current (Tc) | 422 A | — |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 150 W | — |
| Maximum Junction Temperature | +175 degrees C | — |
| Rango de temperatura de funcionamiento | -55 degrees C to +175 degrees C | — |
| Encapsulado | PG-TTFN-9-3 | PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | OptiMOS 7 (trench) |
| Estado RoHS | Compliant | Compliant |
| Qualification | Industrial grade per Infineon datasheet | — |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TC | — | 440 A |
| Continuous Drain Current (ID) at TA | — | 57 A |
| Power Dissipation at TA | — | 2.5 W |
| Power Dissipation at TC | — | 150 W |
| Maximum On-Resistance (RDS(on)) | — | 0.46 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Operating Mode | — | Enhancement-mode |
| Topology Suitability | — | Hard- and soft-switching |