IR2109SPBF vs 2ED2304S06FXUMA1 Vergleich
Detaillierter Direktvergleich von IR2109SPBF von Infineon und 2ED2304S06FXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IR2109SPBF | 2ED2304S06FXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $0,66 |
| Driver Configuration | Half-Bridge | Half-Bridge (High-Side + Low-Side) |
| Number of Drivers | 2 (high-side + low-side) | — |
| High-Side Voltage Tolerance | 600 V | — |
| Supply Voltage (VCC) | 10 V to 20 V | — |
| Source Current (typical) | 0.2 A | — |
| Sink Current (typical) | 0.35 A | — |
| Turn-On Propagation Delay | 150 ns | — |
| Turn-Off Propagation Delay | 150 ns | — |
| Anstiegszeit | 200 ns | — |
| Abfallzeit | 50 ns | — |
| Quiescent VCC Current | 1 mA | — |
| Input Logic Compatibility | 3.3 V / 5 V CMOS / TTL | 3.3 V CMOS / LSTTL (Schmitt-trigger) |
| Undervoltage Lockout | Yes (VCC) | — |
| Bootstrap Diode | Integrated | Integrated (BSD) |
| Betriebs-Sperrschichttemperatur | -40 C to +150 C | — |
| Gehäuse | SOIC-8 | PG-DSO-8-910 (DSO-8) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Technology | — | Infineon thin-film SOI |
| Blocking Voltage (High-Side) | — | 650 V |
| Source Current (typ.) | — | 0.36 A |
| Sink Current (typ.) | — | 0.7 A |
| VCC Supply Range | — | 10 V to 17 V |
| Undervoltage Lockout (UVLO) | — | Yes (VCC and VB-VS) |
| Interlock / Anti-Shoot-Through | — | Built-in |
| Propagation Delay (typ.) | — | 200 ns |
| Betriebstemperaturbereich | — | -40C to +125C |
| MSL-Level | — | 2 |