IR2304SPBF vs IR2010SPBF Vergleich

Detaillierter Direktvergleich von IR2304SPBF von Infineon und IR2010SPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IR2304SPBF IR2010SPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,48 $1,20
Product Type Half-Bridge Gate Driver IC —
Configuration High and Low Side, Independent Channels Half-Bridge (high + low side)
Anzahl der Ausgänge 2 —
Maximum Offset (Bootstrap) Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Output Source/Sink Current 60 mA / 130 mA —
Propagation Delay (Typical) 220 ns —
Input Logic Compatibility 3.3 V, 5 V, 15 V —
Undervoltage Lockout (UVLO) Both High-Side and Low-Side Channels —
Negative Transient Voltage Tolerance Yes (dV/dt immune) —
Logic Input Polarity Non-Inverting —
Gehäuse 8-Pin SOIC (SO-8 N) 16-SOIC (SOIC-16)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -40 C to +125 C —
Technology HVIC + Latch-Immune CMOS, Monolithic —
RoHS-Status Compliant (Pb-free) Compliant (Pb-free PBF suffix)
Number of Drivers — 2 (independent high/low-side outputs)
Offset Voltage (max) — 200 V
Peak Source/Sink Current — 3 A / 3 A
Logic Input Compatibility — CMOS or LSTTL, down to 3.0 V
Propagation Delay (typ) — 95 ns
Rise / Fall Time (typ) — [DATA_NEEDED: rise/fall time]
VCC Supply Voltage (low side) — 10 V to 20 V
VB Bootstrap Supply (high side) — VCC + 10 V to VCC + 20 V
Betriebstemperatur — -40C to +150C
Shutdown Feature — Yes (active input)
MSL-Level — [DATA_NEEDED: MSL rating]
Drive Technology — High-speed power MOSFET / IGBT driver
Channel Matching — Matched propagation delays for cross-conduction minimization

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