IR2304SPBF vs IR2010SPBF 비교

다음의 상세 나란히 비교: IR2304SPBF 제조: Infineon 및 IR2010SPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IR2304SPBF IR2010SPBF
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.48 $1.20
Product Type Half-Bridge Gate Driver IC —
Configuration High and Low Side, Independent Channels Half-Bridge (high + low side)
출력 수 2 —
Maximum Offset (Bootstrap) Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Output Source/Sink Current 60 mA / 130 mA —
Propagation Delay (Typical) 220 ns —
Input Logic Compatibility 3.3 V, 5 V, 15 V —
Undervoltage Lockout (UVLO) Both High-Side and Low-Side Channels —
Negative Transient Voltage Tolerance Yes (dV/dt immune) —
Logic Input Polarity Non-Inverting —
패키지 8-Pin SOIC (SO-8 N) 16-SOIC (SOIC-16)
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -40 C to +125 C —
Technology HVIC + Latch-Immune CMOS, Monolithic —
RoHS 상태 Compliant (Pb-free) Compliant (Pb-free PBF suffix)
Number of Drivers — 2 (independent high/low-side outputs)
Offset Voltage (max) — 200 V
Peak Source/Sink Current — 3 A / 3 A
Logic Input Compatibility — CMOS or LSTTL, down to 3.0 V
Propagation Delay (typ) — 95 ns
Rise / Fall Time (typ) — [DATA_NEEDED: rise/fall time]
VCC Supply Voltage (low side) — 10 V to 20 V
VB Bootstrap Supply (high side) — VCC + 10 V to VCC + 20 V
동작 온도 — -40C to +150C
Shutdown Feature — Yes (active input)
MSL 레벨 — [DATA_NEEDED: MSL rating]
Drive Technology — High-speed power MOSFET / IGBT driver
Channel Matching — Matched propagation delays for cross-conduction minimization

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