IRF1010NPBF vs IRF1010NPBF-VB Vergleich
Detaillierter Direktvergleich von IRF1010NPBF von Infineon und IRF1010NPBF-VB von VBsemi Elec. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF1010NPBF | IRF1010NPBF-VB |
|---|---|---|
| Marke | Infineon | VBsemi Elec |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,32 | $0,25 |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET planar | — |
| Drain-to-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) at Tc | 85 A | — |
| Drain-Source On-Resistance (Rds(on)) | 11 mOhm max at 10 V gate drive | — |
| Total Gate Charge (Qg) | 80 nC | — |
| Power Dissipation (Pd) | 180 W (Tc) | — |
| Gehäuse | TO-220AB | TO-220AB (Through Hole) |
| Montageart | Through Hole | Through Hole |
| Configuration | Single FET, 1 element | Single FET |
| Polarity | N-Channel | — |
| Series | HEXFET | — |
| Recommended Switching Frequency | Below 100 kHz | Below 100 kHz |
| Market Qualification | Industrial (JEDEC per manufacturer) | Industrial |
| RoHS-Status | Compliant (PbF = lead-free) | Compliant (Pb-free suffix) |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Continuous Drain Current (Id) at Ta | [DATA_NEEDED: Id at 25C ambient] | — |
| Transistor Polarity | — | N-Channel |
| Drain-Source Voltage VDSS | — | 55 V |
| Continuous Drain Current ID | — | 85 A (Tc) |
| Power Dissipation PD | — | 180 W (Tc) |
| On-Resistance RDS(on) | — | 0.014 Ohm (14 mOhm) |
| Total Gate Charge Qg | — | 80 nC |
| Gate-Source Voltage VGSS | — | +/-20 V |
| Operating Mode | — | Enhancement |
| Number of Channels | — | 1 |
| Process Technology | — | Planar HEXFET, Advanced Process Technology |