IRF150P220AKMA1 vs IRFR4615TRLPBF Vergleich
Detaillierter Direktvergleich von IRF150P220AKMA1 von Infineon und IRFR4615TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF150P220AKMA1 | IRFR4615TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,55 | $0,39 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRF150P220AKMA1 | — |
| Technology | StrongIRFET | IR MOSFET (N-Channel Enhancement Mode) |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS max) | 150 V | — |
| Continuous Drain Current (ID) at Tc=25C | 203 A | — |
| On-Resistance (RDS(on) max) at VGS=10V | 2.7 mOhm | — |
| Gate-Source Voltage (VGS max) | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation (Pd) at Tc=25C | 556 W | — |
| Power Dissipation (Pd) at Ta=25C | 3.8 W | — |
| Betriebstemperaturbereich | -55C to +175C | -55C to +175C |
| Gehäuse | TO-247-3 (PG-TO247-3) | TO-252AA (DPAK) |
| Montageart | Through Hole | Surface Mount |
| Terminal Finish | Tin (Sn) | — |
| JESD-609 Code | e3 | — |
| RoHS-Status | Compliant | — |
| Lead-Free | Yes | — |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TC=25C | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| On-Resistance RDS(on) max at VGS=10V | — | 42 mOhm |
| Total Gate Charge (Qg) | — | 26 nC |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Power Dissipation (PD) at TC=25C | — | 144 W |
| Avalanche Energy (EAS) | — | 109 mJ |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates Pb-free) |
| Einzelpuls-Avalanche-Energie | — | 109 mJ |