IRF150P220AKMA1 vs IRFR4615TRLPBF 对比

详细并排对比 IRF150P220AKMA1 出自 Infineon 和 IRFR4615TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR4615TRLPBF IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF ✓ 量产中

规格对比

参数 IRF150P220AKMA1 IRFR4615TRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.55 $0.39
Manufacturer Infineon Technologies —
Part Number IRF150P220AKMA1 —
Technology StrongIRFET IR MOSFET (N-Channel Enhancement Mode)
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (VDS max) 150 V —
Continuous Drain Current (ID) at Tc=25C 203 A —
On-Resistance (RDS(on) max) at VGS=10V 2.7 mOhm —
Gate-Source Voltage (VGS max) [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typ] —
Power Dissipation (Pd) at Tc=25C 556 W —
Power Dissipation (Pd) at Ta=25C 3.8 W —
工作温度范围 -55C to +175C -55C to +175C
封装 TO-247-3 (PG-TO247-3) TO-252AA (DPAK)
安装类型 Through Hole Surface Mount
Terminal Finish Tin (Sn) —
JESD-609 Code e3 —
RoHS 状态 Compliant —
Lead-Free Yes —
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at TC=25C — 33 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
On-Resistance RDS(on) max at VGS=10V — 42 mOhm
Total Gate Charge (Qg) — 26 nC
Gate-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Power Dissipation (PD) at TC=25C — 144 W
Avalanche Energy (EAS) — 109 mJ
Lead-Free / RoHS — Yes (PBF suffix indicates Pb-free)
单脉冲雪崩能量 — 109 mJ

数据手册与资源

浏览全部产品 创建 BOM 获取报价