IRF520NPBF vs IRLZ34NPBF Vergleich
Detaillierter Direktvergleich von IRF520NPBF von Infineon und IRLZ34NPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF520NPBF | IRLZ34NPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,66 | $0,65 |
| Manufacturer | Infineon Technologies | Infineon (formerly International Rectifier) |
| Series | HEXFET | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (V_DSS) | 100 V | — |
| Continuous Drain Current (I_D) at Tc | 9.7 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-to-Source Voltage (V_GS) max | ±20 V | — |
| R_DS(on) max at V_GS=10V | 200 mOhm | — |
| Total Gate Charge (Q_g) | 16.7 nC | — |
| Power Dissipation (P_D) at Tc | 48 W | — |
| Betriebstemperaturbereich | -55C to +175C | — |
| Gehäuse | TO-220AB (through-hole) | TO-220AB (through-hole, 3 leads + tab) |
| Montageart | Through Hole | Through Hole |
| MSL-Level | 1 (unlimited) | Not applicable (through-hole) |
| RoHS-Status | Compliant (Pb-free) | Compliant (Pb-free PBF suffix) |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Technology | HEXFET (vertical DMOS) | — |
| Part Number Suffix | — | PBF = Lead-free (Pb-free), Tube packaging |
| Transistortyp | — | N-Channel HEXFET Power MOSFET |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25 C | — | 30 A |
| Continuous Drain Current (ID) at Tc=100 C | — | [DATA_NEEDED: ID at Tc=100 C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance Rds(on) max @ VGS=10 V | — | 35 mOhm |
| On-Resistance Rds(on) max @ VGS=5 V | — | [DATA_NEEDED: Rds(on) at VGS=5 V] |
| Gate Threshold Voltage VGS(th) | — | 1.0 V to 2.0 V (logic-level) |
| Total Gate Charge (Qg) | — | 16.7 nC (typical) |
| Power Dissipation (PD) at Tc=25 C | — | 68 W |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |