IRF520NPBF vs IRLZ34NPBF Comparison
Detailed side-by-side comparison of IRF520NPBF by Infineon and IRLZ34NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF520NPBF | IRLZ34NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.66 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon (formerly International Rectifier) |
| Series | HEXFET | β |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (V_DSS) | 100 V | β |
| Continuous Drain Current (I_D) at Tc | 9.7 A | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current value] | β |
| Gate-to-Source Voltage (V_GS) max | Β±20 V | β |
| R_DS(on) max at V_GS=10V | 200 mOhm | β |
| Total Gate Charge (Q_g) | 16.7 nC | β |
| Power Dissipation (P_D) at Tc | 48 W | β |
| Operating Temperature Range | -55C to +175C | β |
| Package | TO-220AB (through-hole) | TO-220AB (through-hole, 3 leads + tab) |
| Mounting Type | Through Hole | Through Hole |
| MSL Level | 1 (unlimited) | Not applicable (through-hole) |
| RoHS Status | Compliant (Pb-free) | Compliant (Pb-free PBF suffix) |
| Lead-Free Finish | Yes (PBF suffix) | β |
| Technology | HEXFET (vertical DMOS) | β |
| Part Number Suffix | β | PBF = Lead-free (Pb-free), Tube packaging |
| Transistor Type | β | N-Channel HEXFET Power MOSFET |
| Drain-to-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) at Tc=25 C | β | 30 A |
| Continuous Drain Current (ID) at Tc=100 C | β | [DATA_NEEDED: ID at Tc=100 C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance Rds(on) max @ VGS=10 V | β | 35 mOhm |
| On-Resistance Rds(on) max @ VGS=5 V | β | [DATA_NEEDED: Rds(on) at VGS=5 V] |
| Gate Threshold Voltage VGS(th) | β | 1.0 V to 2.0 V (logic-level) |
| Total Gate Charge (Qg) | β | 16.7 nC (typical) |
| Power Dissipation (PD) at Tc=25 C | β | 68 W |
| Operating Junction Temperature | β | -55 C to +175 C |