IRF520NPBF vs IRLZ34NPBF 비교
다음의 상세 나란히 비교: IRF520NPBF 제조: Infineon 및 IRLZ34NPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF520NPBF | IRLZ34NPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.66 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon (formerly International Rectifier) |
| Series | HEXFET | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (V_DSS) | 100 V | — |
| Continuous Drain Current (I_D) at Tc | 9.7 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-to-Source Voltage (V_GS) max | ±20 V | — |
| R_DS(on) max at V_GS=10V | 200 mOhm | — |
| Total Gate Charge (Q_g) | 16.7 nC | — |
| Power Dissipation (P_D) at Tc | 48 W | — |
| 동작 온도 범위 | -55C to +175C | — |
| 패키지 | TO-220AB (through-hole) | TO-220AB (through-hole, 3 leads + tab) |
| 실장 유형 | Through Hole | Through Hole |
| MSL 레벨 | 1 (unlimited) | Not applicable (through-hole) |
| RoHS 상태 | Compliant (Pb-free) | Compliant (Pb-free PBF suffix) |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Technology | HEXFET (vertical DMOS) | — |
| Part Number Suffix | — | PBF = Lead-free (Pb-free), Tube packaging |
| 트랜지스터 유형 | — | N-Channel HEXFET Power MOSFET |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25 C | — | 30 A |
| Continuous Drain Current (ID) at Tc=100 C | — | [DATA_NEEDED: ID at Tc=100 C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance Rds(on) max @ VGS=10 V | — | 35 mOhm |
| On-Resistance Rds(on) max @ VGS=5 V | — | [DATA_NEEDED: Rds(on) at VGS=5 V] |
| Gate Threshold Voltage VGS(th) | — | 1.0 V to 2.0 V (logic-level) |
| Total Gate Charge (Qg) | — | 16.7 nC (typical) |
| Power Dissipation (PD) at Tc=25 C | — | 68 W |
| 동작 접합 온도 | — | -55 C to +175 C |