IRF7306TRPBF vs FDS6575 Vergleich

Detaillierter Direktvergleich von IRF7306TRPBF von Infineon und FDS6575 von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF7306TRPBF FDS6575
Marke Infineon onsemi
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,55 $0,28
Polarity P-Channel (dual) P-Channel
Number of Channels 2 (independent, in single package) —
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) -3.6 A at 25°C -10 A
On-Resistance RDS(on) max 100 mOhm at VGS = -10 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg total] —
Maximum Power Dissipation 2 W at TA = 25°C —
Technology HEXFET Power MOSFET (Generation V) PowerTrench (rugged gate)
Betriebstemperaturbereich -55°C to +150°C (junction) [DATA_NEEDED: operating temperature range]
Gehäuse 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) SOIC-8 (SO-8)
Montageart Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
MSL-Level 1 (per JEDEC J-STD-020) —
RoHS Compliance Yes (PBF suffix indicates Pb-free) —
Qualification Consumer market qualification standards (per IR/Infineon datasheet) —
Avalanche Rated Yes (ruggedized device per datasheet) —
Drain-Source Voltage (VDS) — -20 V
On-Resistance (RDS(on)) — 13 mOhm max at VGS = -4.5 V
Gate Drive Voltage Range — 2.5 V to 8 V
Gate-Schwellenspannung — [DATA_NEEDED: gate threshold voltage range]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation — [DATA_NEEDED: power dissipation at TA]
Configuration — Single MOSFET
Gate Source Voltage (VGS) Range — [DATA_NEEDED: VGS max rating]
RoHS-Status — Compliant

Datenblätter & Ressourcen

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