IRF7306TRPBF vs FDS6575 对比

详细并排对比 IRF7306TRPBF 出自 Infineon 和 FDS6575 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRF7306TRPBF FDS6575
品牌 Infineon onsemi
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.55 $0.28
Polarity P-Channel (dual) P-Channel
Number of Channels 2 (independent, in single package) —
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) -3.6 A at 25°C -10 A
On-Resistance RDS(on) max 100 mOhm at VGS = -10 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg total] —
Maximum Power Dissipation 2 W at TA = 25°C —
Technology HEXFET Power MOSFET (Generation V) PowerTrench (rugged gate)
工作温度范围 -55°C to +150°C (junction) [DATA_NEEDED: operating temperature range]
封装 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) SOIC-8 (SO-8)
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
MSL 等级 1 (per JEDEC J-STD-020) —
RoHS Compliance Yes (PBF suffix indicates Pb-free) —
Qualification Consumer market qualification standards (per IR/Infineon datasheet) —
Avalanche Rated Yes (ruggedized device per datasheet) —
Drain-Source Voltage (VDS) — -20 V
On-Resistance (RDS(on)) — 13 mOhm max at VGS = -4.5 V
Gate Drive Voltage Range — 2.5 V to 8 V
栅极阈值电压 — [DATA_NEEDED: gate threshold voltage range]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation — [DATA_NEEDED: power dissipation at TA]
Configuration — Single MOSFET
Gate Source Voltage (VGS) Range — [DATA_NEEDED: VGS max rating]
RoHS 状态 — Compliant

数据手册与资源

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