IRF7309TRPBF vs IRF7313TRPBF Vergleich

Detaillierter Direktvergleich von IRF7309TRPBF von Infineon und IRF7313TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF7309TRPBF IRF7313TRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,35 $0,27
Configuration Dual N-Channel + P-Channel (Complementary) —
Polarity N+P —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (N-channel, TA=25C) 4 A —
Continuous Drain Current (P-channel, TA=25C) 3 A —
On-Resistance (N-channel, max) 50 mOhm —
On-Resistance (P-channel, max) [DATA_NEEDED: RDS(on) P-channel value] —
Power Dissipation (TA=25C) 1.4 W —
Technology IR HEXFET Generation V IR MOSFET Generation V (HEXFET Fifth Generation)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] 1.0 V to 2.5 V (typical range)
Betriebstemperaturbereich -55C to +150C (TJ) -55C to +150C (junction)
Gehäuse 8-SO (SOIC-8) 8-pin SOIC (SO-8) surface mount
Montageart Surface Mount Surface Mount
MSL-Level MSL-1 (unlimited floor life per JEDEC J-STD-020) 1
Lead-Free Status Yes (TRPBF suffix = Pb-free) —
RoHS-Status Compliant —
Packaging Tape & Reel —
Manufacturer — Infineon (formerly International Rectifier)
Part Number — IRF7313TRPBF
Transistor Configuration — Dual N-Channel (Independent)
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) max — 6.5 A per channel
On-Resistance (RDS(on)) max — 29 mOhm at VGS=10V
Power Dissipation (PD) max — 2 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Lead-Free / Pbf — Yes (lead-free plating)
Avalanche Rated — Yes
Qualification Standard — Consumer market (per IR datasheet)
Shipping Media — Tape & Reel (TRPBF suffix)

Datenblätter & Ressourcen

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