IRF7309TRPBF - Dual N/P MOSFET Array 30V 4A/3A SO-8 | Infineon
Teilenummer: IRF7309TRPBF ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.97 | $0,97 |
| 10 | $0.85 | $8,50 |
| 100 | $0.71 | $71,00 |
| 500 | $0.58 | $290,00 |
| 1.000 | $0.46 | $460,00 |
| 3.000 | $0.35 | $1.050,00 |
IRF7309TRPBF Übersicht
A dual MOSFET array (also called a MOSFET pair or co-pack) is a discrete semiconductor that places two MOSFETs in one package, sharing the same substrate and thermal pad. This packaging style reduces PCB footprint, simplifies layout for half-bridge or complementary switching topologies, and provides matched thermal characteristics between the two channels. MOSFET arrays belong to the broader family of discrete semiconductors (FETs/transistors) within power management and signal switching.
Key features of the IRF7309TRPBF include a maximum on-resistance of 50 mΩ (N-channel) per the Infineon family datasheet, low gate charge for fast switching, and the ruggedized HEXFET Generation V process technology. The integrated P-channel eliminates the need for a charge pump in low-side switching applications, while the N-channel side serves as the synchronous or main switch. This combination is engineered for use in DC-DC converters, motor drivers, and load switches in space-constrained designs.
The HEXFET Generation V process delivers an extremely low on-resistance per silicon area, providing both fast switching speed and ruggedized device operation. The part is rated for surface-mount reflow soldering up to 260°C peak per JEDEC J-STD-020 and is qualified to MSL-1 for unlimited floor-life.
Typical applications for the IRF7309TRPBF include DC-DC buck/boost converters, half-bridge motor drivers, battery protection circuits, and high-side/low-side load switches in portable electronics and industrial control modules. The complementary N/P architecture also makes it a natural fit for full-bridge or push-pull topologies in audio amplifiers and Class-D drivers.
When designing with this part, observe the SO-8 thermal pad layout guidelines from Infineon's SO-8 Power MOSFET application note. The combined dissipation of both MOSFETs sharing one thermal pad requires careful copper-pour sizing to keep junction temperature below 150°C under worst-case load.
This page synthesizes distributor pricing, drop-in alternative identification, and practical design notes that are not consolidated in the Infineon datasheet, providing engineers with an actionable engineering reference.
Drop-in-Alternativen für IRF7309TRPBF – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IRF7309TRPBF (gleiche Bauform und Footprint) – abweichend in Technology, Package, Operating Temperature Range, MSL Level, Configuration.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IRF7309PBF
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRF7313TRPBF
✅ Drop-In✓ Auf Lager
$0.27 / Stück
Datenblatt ansehen →IRF7309TRPBF-1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRFR9024NTRPBF
✅ Drop-In✓ Auf Lager
$0.17 / Stück
Datenblatt ansehen →NTMD6N02R2G
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRF7309TRPBF Grenzwerte & elektrische Eigenschaften
| Configuration | Dual N-Channel + P-Channel (Complementary) |
| Polarity | N+P |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (N-channel, TA=25C) | 4 A |
| Continuous Drain Current (P-channel, TA=25C) | 3 A |
| On-Resistance (N-channel, max) | 50 mOhm |
| Power Dissipation (TA=25C) | 1.4 W |
| Technology | IR HEXFET Generation V |
| Betriebstemperaturbereich | -55C to +150C (TJ) |
| Gehäuse | 8-SO (SOIC-8) |
| Montageart | Surface Mount |
| MSL-Level | MSL-1 (unlimited floor life per JEDEC J-STD-020) |
| Lead-Free Status | Yes (TRPBF suffix = Pb-free) |
| RoHS-Status | Compliant |
| Packaging | Tape & Reel |
IRF7309TRPBF Pin-Konfiguration
| Pin 1 | G1 (N-ch Gate) — Gate of N-channel MOSFET |
| Pin 2 | D1 (N-ch Drain) — Drain of N-channel MOSFET |
| Pin 3 | S1 (N-ch Source) — Source of N-channel MOSFET |
| Pin 4 | S1 (N-ch Source) — Source of N-channel MOSFET (tied to thermal pad) |
| Pin 5 | D2 (P-ch Drain) — Drain of P-channel MOSFET |
| Pin 6 | D2 (P-ch Drain) — Drain of P-channel MOSFET |
| Pin 7 | S2 (P-ch Source) — Source of P-channel MOSFET |
| Pin 8 | G2 (P-ch Gate) — Gate of P-channel MOSFET |
Sicherer Arbeitsbereich (N-channel, TA=25C, TC=25C)
Typische Anwendungen
IRF7309TRPBF ist geeignet für 6 Anwendungs: Synchronous Buck DC-DC Converter, H-Bridge Motor Driver (Low Power), Battery Protection / Load Switch, Class-D Audio Output Stage, USB Load Switch / Power Mux, Industrial Sensor / Solenoid Driver.
Synchronous Buck DC-DC Converter
The IRF7309TRPBF's complementary N+P architecture maps directly onto a synchronous buck converter: the P-channel serves as the high-side switch (driven low to turn on) and the N-channel as the low-side synchronous rectifier. With 30V VDS headroom the part comfortably handles 12V input rails, and 4A/3A continuous ratings suit point-of-load converters up to ~15W output. According to the Infineon datasheet, the Generation V HEXFET process delivers low on-resistance per silicon area, keeping conduction loss minimal at sub-2A loads. The integrated SO-8 footprint cuts the high-side/low-side loop inductance versus two discrete SO-8 parts, reducing ringing and improving EMI. Use a gate driver such as the IR2104 to switch the N-channel efficiently and tie the P-channel gate directly to a logic-level PWM output.
Empfohlen
H-Bridge Motor Driver (Low Power)
For sub-1A brushed DC motor or small stepper applications, the IRF7309TRPBF forms a compact half-bridge when paired with a second copy of itself - yielding a full H-bridge in two SO-8 packages. The complementary N/P arrangement simplifies gate drive because each half-bridge can be controlled with complementary PWM signals without a bootstrap capacitor. According to Infineon, the 30V VDS rating supports motor supplies up to 24V with margin for inductive flyback. The 1.4W dissipation limit and shared thermal pad require careful PCB copper sizing if continuous operation is expected; otherwise the small SO-8 footprint restricts sustained torque. Best suited for toys, valve actuators, and small pumps under 5W mechanical output.
Empfohlen
Battery Protection / Load Switch
The IRF7309TRPBF's P-channel MOSFET half is ideal for reverse-battery and over-discharge protection in single-cell Li-ion or multi-cell NiMH packs. The 30V VDS gives ample margin for 3S Li-ion (12.6V max) packs, and the 3A continuous rating covers most portable device load currents. According to the Infineon datasheet, the P-channel's source-to-drain body diode conducts during reverse polarity events, protecting downstream circuitry. Pair with a protection IC such as the BQ29700DSER for accurate cell-level cutoff. The N-channel half can be used for a low-side discharge FET or as a redundant protection path, sharing the same thermal pad for compact protection boards in wearable and IoT devices.
Empfohlen
Class-D Audio Output Stage
In sub-10W Class-D audio amplifier output stages, the IRF7309TRPBF provides a complementary N/P totem-pole per rail, enabling a fully differential half-bridge with minimal dead-time. The Generation V HEXFET process yields low on-resistance per silicon area, reducing conduction loss and improving amplifier efficiency. According to Infineon, the fast switching speed supports PWM carrier frequencies above 250 kHz, allowing output filter inductors to shrink. The shared SO-8 thermal pad aids thermal coupling between the two MOSFETs, keeping the half-bridge thermally balanced. Suitable for portable speakers, headphone amplifiers, and small subwoofer plate amps where SO-8 footprint is preferred over larger DPAK packages.
Empfohlen
USB Load Switch / Power Mux
For USB Type-C power muxing and load-disconnect functions in 5V/3A subsystems, the IRF7309TRPBF's P-channel half serves as the high-side switch with reverse-current blocking, while the N-channel half can control a secondary supply path or indicator LED driver. The 30V VDS easily tolerates USB-PD voltage spikes and hot-plug transients. According to the Infineon datasheet, the P-channel's low gate charge enables fast turn-off for inrush limiting. Place a 10k gate pull-up on the P-channel for default-off behavior, and drive the gate low via an open-drain GPIO from a power mux controller such as the FUSB302. The compact SO-8 fits easily inside Type-C connector shrouds.
Empfohlen
Industrial Sensor / Solenoid Driver
The IRF7309TRPBF drives inductive loads such as 24V solenoids, small relays, and valve coils in industrial PLC and sensor-interface modules. The N-channel handles the low-side switching for ground-referenced loads, while the P-channel provides high-side switching for systems where ground-referenced switching is impractical. According to Infineon, the 30V VDS rating tolerates 24V industrial rails with margin for flyback transients when paired with a TVS or freewheeling diode. The wide -55C to +150C junction temperature range suits outdoor and factory-floor environments. The complementary architecture simplifies hardware design for bidirectional actuator control in process automation.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IRF7309TRPBF – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IRF7309PBF | IRF7313TRPBF | IRF7309TRPBF-1 | IRFR9024NTRPBF | NTMD6N02R2G |
|---|---|---|---|---|---|---|
| Package | SO-8 (SOIC-8) | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Configuration | Dual N+P | Dual N+P | Dual N+P | Dual N+P | Single P-channel | Dual N-channel |
| VDS (max) | 30 V | 30 V | 30 V | 30 V | 55 V | 20 V |
| Continuous Drain Current (N-ch) | 4 A | 4 A | 6 A | 4 A | N/A (P-only) | 6.6 A |
| Continuous Drain Current (P-ch) | 3 A | 3 A | 5 A | 3 A | 3.4 A | N/A (N-only) |
| RDS(on) N-channel (max) | 50 mOhm | 50 mOhm | 30 mOhm | 50 mOhm | N/A | 30 mOhm |
| Power Dissipation (TA=25C) | 1.4 W | 1.4 W | 2.0 W | 1.4 W | 2.0 W | 1.69 W |
Wichtigste Unterscheidungsmerkmale
- Lower RDS(on) for same footprint and pinout (vs. IRF7313TRPBF)
- Same die with automotive qualification (-1 suffix) (vs. IRF7309TRPBF-1)
- Dual complementary topology in one SO-8 (vs. NTMD6N02R2G (onsemi))
Designhinweise
The IRF7309TRPBF's 1.4W power dissipation rating assumes TA=25C with the SO-8 thermal pad soldered to a minimum 1 square inch of 2oz copper on a JEDEC standard test board. Estimated: at TA=25C, 50 mOhm RDS(on), and 2A continuous current, each MOSFET dissipates P = I^2 * RDS(on) = 4 * 0.05 = 0.2W per device (0.4W combined for both channels). With SO-8 theta_JA approximately 50 C/W on minimum pad, junction rise is 50 * 0.4 = 20C, well within the 150C limit. For continuous operation above 1.5A per channel, increase copper pour to 2+ square inches and consider thermal vias to inner planes.
Use a single contiguous copper pour under the SO-8 body tied to the appropriate source pin (pin 4 for N-channel source, pin 7 for P-channel source, depending on circuit topology). Per Infineon's SO-8 Power MOSFET layout guidelines, place gate-drive traces directly over the gate pin with minimal length to limit ringing; use a 10-100 Ohm gate-source resistor to dampen high-frequency oscillations. Keep the switching node (P-channel drain or N-channel drain) short and away from sensitive analog traces to reduce EMI.
Do not exceed VGS = +/-20V (absolute max). Driving the P-channel gate above the source by more than 20V destroys the gate oxide - use a gate clamp Zener or driver IC if the upstream supply can exceed 20V. The body diode of the P-channel MOSFET has limited reverse recovery; do not rely on it for high-frequency rectification. Finally, verify pinout against the Infineon datasheet before substituting - the IRF7309 is NOT pin-compatible with the dual-N-channel IRF7306 despite the similar part number.
For half-bridge layouts, minimize the high-side P-channel drain-to-low-side N-channel drain switching loop by placing both MOSFETs adjacent and routing the switching node on the top layer only. Add a low-ESR ceramic bypass capacitor (10uF X7R) directly across the supply rails adjacent to the IRF7309TRPBF to suppress switching transients. According to Infineon's application note on SO-8 dual MOSFETs, the shared thermal pad benefits from 4-8 thermal vias (0.3mm drill) to an inner ground plane for improved heat spreading.
Compliance-Informationen
TRPBF suffix indicates lead-free (Pb-free) per Infineon lead-free mandate. RoHS compliant. Not AEC-Q100 qualified in standard -1 variant; choose IRF7309TRPBF-1 for automotive-grade.
