IRF7309TRPBF vs IRF7313TRPBF 비교

다음의 상세 나란히 비교: IRF7309TRPBF 제조: Infineon 및 IRF7313TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF7309TRPBF IRF7313TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.35 $0.27
Configuration Dual N-Channel + P-Channel (Complementary) —
Polarity N+P —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (N-channel, TA=25C) 4 A —
Continuous Drain Current (P-channel, TA=25C) 3 A —
On-Resistance (N-channel, max) 50 mOhm —
On-Resistance (P-channel, max) [DATA_NEEDED: RDS(on) P-channel value] —
Power Dissipation (TA=25C) 1.4 W —
Technology IR HEXFET Generation V IR MOSFET Generation V (HEXFET Fifth Generation)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] 1.0 V to 2.5 V (typical range)
동작 온도 범위 -55C to +150C (TJ) -55C to +150C (junction)
패키지 8-SO (SOIC-8) 8-pin SOIC (SO-8) surface mount
실장 유형 Surface Mount Surface Mount
MSL 레벨 MSL-1 (unlimited floor life per JEDEC J-STD-020) 1
Lead-Free Status Yes (TRPBF suffix = Pb-free) —
RoHS 상태 Compliant —
Packaging Tape & Reel —
Manufacturer — Infineon (formerly International Rectifier)
Part Number — IRF7313TRPBF
Transistor Configuration — Dual N-Channel (Independent)
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) max — 6.5 A per channel
On-Resistance (RDS(on)) max — 29 mOhm at VGS=10V
Power Dissipation (PD) max — 2 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Lead-Free / Pbf — Yes (lead-free plating)
Avalanche Rated — Yes
Qualification Standard — Consumer market (per IR datasheet)
Shipping Media — Tape & Reel (TRPBF suffix)

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