IRF7319TRPBF vs IRF7205TRPBF Vergleich
Detaillierter Direktvergleich von IRF7319TRPBF von Infineon und IRF7205TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF7319TRPBF | IRF7205TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $0,18 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Product Type | Dual MOSFET Array (N-channel + P-channel) | — |
| Technology | IR MOSFET / Fifth Generation HEXFET | IR HEXFET (4th generation) |
| Drain-to-Source Voltage (VDS) | 30 V | -30 V |
| Continuous Drain Current N-channel (ID) | 6.5 A | — |
| Continuous Drain Current P-channel (ID) | 4.9 A | — |
| RDS(on) Max N-channel | 29 mOhm (per Infineon product page) | — |
| RDS(on) Max P-channel | [DATA_NEEDED: P-channel RDS(on) max] | — |
| Total Power Dissipation (PD) | 2 W | — |
| Thermal Resistance Junction-to-Ambient N-ch | 120 C/W (steady state) | — |
| Thermal Resistance Junction-to-Ambient P-ch | 110 C/W (steady state) | — |
| Package Type | 8-SOIC (SO-8) | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Lead-Free / RoHS | Yes (PBF suffix = Pb-free) | — |
| Packaging | Tape & Reel (TR suffix) | Tape & Reel (TR suffix) |
| Configuration | N-Channel + P-Channel (complementary half-bridge) | — |
| FET Type | — | P-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25°C | — | -4.6 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=-10V | — | 70 mΩ |
| On-Resistance RDS(on) max @ VGS=-4.5V | — | 130 mΩ |
| Gate Threshold Voltage VGS(th) | — | -1.0 V to -3.0 V |
| Total Gate Charge Qg | — | 27 nC |
| Verlustleistung (TC=25°C) | — | 2.5 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +150 °C |
| Gehäuse | — | SO-8 (8-SO) |
| RoHS / Lead-Free | — | Lead-Free (PBF suffix), RoHS compliant |