IRF7319TRPBF vs IRF7205TRPBF Comparison
Detailed side-by-side comparison of IRF7319TRPBF by Infineon and IRF7205TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF7319TRPBF | IRF7205TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.18 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Product Type | Dual MOSFET Array (N-channel + P-channel) | β |
| Technology | IR MOSFET / Fifth Generation HEXFET | IR HEXFET (4th generation) |
| Drain-to-Source Voltage (VDS) | 30 V | -30 V |
| Continuous Drain Current N-channel (ID) | 6.5 A | β |
| Continuous Drain Current P-channel (ID) | 4.9 A | β |
| RDS(on) Max N-channel | 29 mOhm (per Infineon product page) | β |
| RDS(on) Max P-channel | [DATA_NEEDED: P-channel RDS(on) max] | β |
| Total Power Dissipation (PD) | 2 W | β |
| Thermal Resistance Junction-to-Ambient N-ch | 120 C/W (steady state) | β |
| Thermal Resistance Junction-to-Ambient P-ch | 110 C/W (steady state) | β |
| Package Type | 8-SOIC (SO-8) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Lead-Free / RoHS | Yes (PBF suffix = Pb-free) | β |
| Packaging | Tape & Reel (TR suffix) | Tape & Reel (TR suffix) |
| Configuration | N-Channel + P-Channel (complementary half-bridge) | β |
| FET Type | β | P-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25Β°C | β | -4.6 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=-10V | β | 70 mΞ© |
| On-Resistance RDS(on) max @ VGS=-4.5V | β | 130 mΞ© |
| Gate Threshold Voltage VGS(th) | β | -1.0 V to -3.0 V |
| Total Gate Charge Qg | β | 27 nC |
| Power Dissipation (TC=25Β°C) | β | 2.5 W |
| Operating Junction Temperature | β | -55 Β°C to +150 Β°C |
| Package | β | SO-8 (8-SO) |
| RoHS / Lead-Free | β | Lead-Free (PBF suffix), RoHS compliant |