IRF7341GTRPBF vs IRF7389PBF Vergleich

Detaillierter Direktvergleich von IRF7341GTRPBF von Infineon und IRF7389PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF7341GTRPBF IRF7389PBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,76 $0,61
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) 5.1 A —
On-Resistance (RDS(on)) max 50 mOhm at VGS=10V —
Power Dissipation (PD) 2.4 W —
Maximum Junction Temperature 175 C —
Configuration Dual N-Channel N and P-Channel (complementary half-bridge)
Technology IR HEXFET Planar MOSFET Generation V HEXFET
Gehäuse 8-SO (SOIC-8) SO-8 (SOIC-8) surface mount
Montageart Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Output Capacitance (Coss) [DATA_NEEDED: Coss typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Betriebstemperaturbereich -55 C to +175 C [DATA_NEEDED: full operating temperature range]
RoHS-Status Compliant Compliant
Lead-Free Yes (PBF suffix) Yes
Drain-to-Source Voltage N-Ch (V_DSS) — 30 V
Drain-to-Source Voltage P-Ch (V_DSS) — -30 V
Continuous Drain Current N-Ch (I_D) — 7.3 A
Continuous Drain Current P-Ch (I_D) — -5.3 A
On-Resistance N-Ch R_DS(on) max — 0.029 ohm at V_GS=10V
On-Resistance P-Ch R_DS(on) max — 0.058 ohm at V_GS=10V
Total Gate Charge N-Ch (Q_g) typical — 22 nC
Total Gate Charge P-Ch (Q_g) typical — 23 nC
Power Dissipation (P_D) — 2.5 W
Pinout — Industry-standard complementary SO-8
Halogenfrei — Yes
Avalanche Rated — Yes (fully avalanche rated)

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