IRF7341GTRPBF vs IRF7389PBF 对比
详细并排对比 IRF7341GTRPBF 出自 Infineon 和 IRF7389PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF7341GTRPBF | IRF7389PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.76 | $0.61 |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 5.1 A | — |
| On-Resistance (RDS(on)) max | 50 mOhm at VGS=10V | — |
| Power Dissipation (PD) | 2.4 W | — |
| Maximum Junction Temperature | 175 C | — |
| Configuration | Dual N-Channel | N and P-Channel (complementary half-bridge) |
| Technology | IR HEXFET Planar MOSFET | Generation V HEXFET |
| 封装 | 8-SO (SOIC-8) | SO-8 (SOIC-8) surface mount |
| 安装类型 | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| 工作温度范围 | -55 C to +175 C | [DATA_NEEDED: full operating temperature range] |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | Yes |
| Drain-to-Source Voltage N-Ch (V_DSS) | — | 30 V |
| Drain-to-Source Voltage P-Ch (V_DSS) | — | -30 V |
| Continuous Drain Current N-Ch (I_D) | — | 7.3 A |
| Continuous Drain Current P-Ch (I_D) | — | -5.3 A |
| On-Resistance N-Ch R_DS(on) max | — | 0.029 ohm at V_GS=10V |
| On-Resistance P-Ch R_DS(on) max | — | 0.058 ohm at V_GS=10V |
| Total Gate Charge N-Ch (Q_g) typical | — | 22 nC |
| Total Gate Charge P-Ch (Q_g) typical | — | 23 nC |
| Power Dissipation (P_D) | — | 2.5 W |
| Pinout | — | Industry-standard complementary SO-8 |
| 无卤 | — | Yes |
| Avalanche Rated | — | Yes (fully avalanche rated) |