IRF7389PBF vs IRF7854TRPBF Vergleich

Detaillierter Direktvergleich von IRF7389PBF von Infineon und IRF7854TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF7389PBF IRF7854TRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,61 $0,48
Configuration N and P-Channel (complementary half-bridge) —
Drain-to-Source Voltage N-Ch (V_DSS) 30 V —
Drain-to-Source Voltage P-Ch (V_DSS) -30 V —
Continuous Drain Current N-Ch (I_D) 7.3 A —
Continuous Drain Current P-Ch (I_D) -5.3 A —
On-Resistance N-Ch R_DS(on) max 0.029 ohm at V_GS=10V —
On-Resistance P-Ch R_DS(on) max 0.058 ohm at V_GS=10V —
Total Gate Charge N-Ch (Q_g) typical 22 nC —
Total Gate Charge P-Ch (Q_g) typical 23 nC —
Power Dissipation (P_D) 2.5 W —
Technology Generation V HEXFET HEXFET (planar N-channel)
Gehäuse SO-8 (SOIC-8) surface mount SO-8
Pinout Industry-standard complementary SO-8 —
Betriebstemperaturbereich [DATA_NEEDED: full operating temperature range] -55°C to +150°C (TJ)
Montageart Surface Mount Surface Mount
RoHS-Status Compliant —
Lead-Free Yes —
Halogenfrei Yes —
Avalanche Rated Yes (fully avalanche rated) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at Ta=25°C — 10 A
Power Dissipation (PD) at Ta=25°C — 2.5 W
On-Resistance RDS(on) max at VGS=10V — 13.4 mΩ
Gate-Source Threshold Voltage VGS(th) max — 4.9 V
Total Gate Charge Qg — 27 nC
Lead-Free / RoHS — Yes (PBF suffix, lead-free)
Qualification — JEDEC industrial, Normal level
Solder Process — Reflow and wave-solderable
Gate Drive Voltage (recommended) — 10 V

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern