IRF7389PBF vs IRF7854TRPBF Comparison

Detailed side-by-side comparison of IRF7389PBF by Infineon and IRF7854TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7389PBF IRF7854TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.48
Configuration N and P-Channel (complementary half-bridge) β€”
Drain-to-Source Voltage N-Ch (V_DSS) 30 V β€”
Drain-to-Source Voltage P-Ch (V_DSS) -30 V β€”
Continuous Drain Current N-Ch (I_D) 7.3 A β€”
Continuous Drain Current P-Ch (I_D) -5.3 A β€”
On-Resistance N-Ch R_DS(on) max 0.029 ohm at V_GS=10V β€”
On-Resistance P-Ch R_DS(on) max 0.058 ohm at V_GS=10V β€”
Total Gate Charge N-Ch (Q_g) typical 22 nC β€”
Total Gate Charge P-Ch (Q_g) typical 23 nC β€”
Power Dissipation (P_D) 2.5 W β€”
Technology Generation V HEXFET HEXFET (planar N-channel)
Package SO-8 (SOIC-8) surface mount SO-8
Pinout Industry-standard complementary SO-8 β€”
Operating Temperature Range [DATA_NEEDED: full operating temperature range] -55Β°C to +150Β°C (TJ)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant β€”
Lead-Free Yes β€”
Halogen-Free Yes β€”
Avalanche Rated Yes (fully avalanche rated) β€”
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (ID) at Ta=25Β°C β€” 10 A
Power Dissipation (PD) at Ta=25Β°C β€” 2.5 W
On-Resistance RDS(on) max at VGS=10V β€” 13.4 mΞ©
Gate-Source Threshold Voltage VGS(th) max β€” 4.9 V
Total Gate Charge Qg β€” 27 nC
Lead-Free / RoHS β€” Yes (PBF suffix, lead-free)
Qualification β€” JEDEC industrial, Normal level
Solder Process β€” Reflow and wave-solderable
Gate Drive Voltage (recommended) β€” 10 V

Datasheets & Resources

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