IRF7416TRPBF vs IRFH5020TRPBF Vergleich
Detaillierter Direktvergleich von IRF7416TRPBF von Infineon und IRFH5020TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF7416TRPBF | IRFH5020TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,32 | $0,36 |
| FET Type | P-Channel | MOSFET N-Channel, Metal Oxide |
| Technology | HEXFET (IR MOSFET) | — |
| Drain-to-Source Voltage (VDS) | -30 V | 200 V |
| Continuous Drain Current (ID) at TA=25C | -10 A | — |
| Pulsed Drain Current (IDM) | -50 A | 63 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 20 mOhm at VGS = -10 V | — |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | -1 V to -3 V | — |
| Total Gate Charge (Qg) | 61 nC | — |
| Power Dissipation (PD) max at TA=25C | 2.5 W | — |
| Thermal Resistance, Junction-to-Ambient (RthJA) | 50 C/W | — |
| Betriebs-Sperrschichttemperaturbereich | -55 C to +150 C | — |
| Gehäuse | 8-SO (SOIC-8) | — |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | — |
| Lead-Free | Yes | — |
| MSL-Level | 1 (unlimited) | 1 (per industry standard for PQFN-8) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Family | — | HEXFET Power MOSFET |
| Configuration | — | Single with built-in diode |
| Continuous Drain Current (ID) at TA=25°C | — | 5.1 A |
| RDS(on) max at VGS=10V | — | 55 mΩ |
| Gate Charge (Qg) typ | — | 11 nC |
| Power Dissipation (TA=25°C) | — | 3.6 W |
| Verlustleistung (TC=25°C) | — | 8.3 W |
| Thermal Resistance, Junction-to-PCB (RthJB) | — | 0.8 °C/W |
| Package Type | — | 8-PQFN (5x6 mm) SuperSO8 |
| Profile Height | — | ≤ 0.9 mm |
| Betriebstemperaturbereich | — | -55 °C to +150 °C (TJ max) |
| Qualification Standard | — | JEDEC (Normal level) |
| Gate Drive Optimization | — | 10 V VGS |
| RoHS Compliance | — | Compliant (Pb-free suffix PBF) |