IRF7416TRPBF vs IRFH5020TRPBF 비교
다음의 상세 나란히 비교: IRF7416TRPBF 제조: Infineon 및 IRFH5020TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF7416TRPBF | IRFH5020TRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.32 | $0.36 |
| FET Type | P-Channel | MOSFET N-Channel, Metal Oxide |
| Technology | HEXFET (IR MOSFET) | — |
| Drain-to-Source Voltage (VDS) | -30 V | 200 V |
| Continuous Drain Current (ID) at TA=25C | -10 A | — |
| Pulsed Drain Current (IDM) | -50 A | 63 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 20 mOhm at VGS = -10 V | — |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | -1 V to -3 V | — |
| Total Gate Charge (Qg) | 61 nC | — |
| Power Dissipation (PD) max at TA=25C | 2.5 W | — |
| Thermal Resistance, Junction-to-Ambient (RthJA) | 50 C/W | — |
| 동작 접합 온도 범위 | -55 C to +150 C | — |
| 패키지 | 8-SO (SOIC-8) | — |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant | — |
| Lead-Free | Yes | — |
| MSL 레벨 | 1 (unlimited) | 1 (per industry standard for PQFN-8) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Family | — | HEXFET Power MOSFET |
| Configuration | — | Single with built-in diode |
| Continuous Drain Current (ID) at TA=25°C | — | 5.1 A |
| RDS(on) max at VGS=10V | — | 55 mΩ |
| Gate Charge (Qg) typ | — | 11 nC |
| Power Dissipation (TA=25°C) | — | 3.6 W |
| 전력 손실 (TC=25°C) | — | 8.3 W |
| Thermal Resistance, Junction-to-PCB (RthJB) | — | 0.8 °C/W |
| Package Type | — | 8-PQFN (5x6 mm) SuperSO8 |
| Profile Height | — | ≤ 0.9 mm |
| 동작 온도 범위 | — | -55 °C to +150 °C (TJ max) |
| Qualification Standard | — | JEDEC (Normal level) |
| Gate Drive Optimization | — | 10 V VGS |
| RoHS Compliance | — | Compliant (Pb-free suffix PBF) |