IRF7469TRPBF vs IPB024N10N5ATMA1 Vergleich

Detaillierter Direktvergleich von IRF7469TRPBF von Infineon und IPB024N10N5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF7469TRPBF IPB024N10N5ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,37 $1,86
FET Type N-Channel —
Technology IR MOSFET™ (HEXFET) OptiMOS 5 N-Channel MOSFET (trench, shielded gate)
Drain-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) at TA=25°C 9 A —
Rds(on) Max at Vgs=10V 17 mΩ —
Total Gate Charge (Qg) 15 nC [DATA_NEEDED: Qg total gate charge]
Gate-Source Voltage (Vgs) Max ±20 V —
Power Dissipation (Pd) at TA=25°C 2.5 W —
Betriebstemperaturbereich -55°C to +150°C (Tj) -55C to +175C (junction)
Gehäuse 8-SO (SOIC-8) PG-TO263-7 (D2PAK-7)
Montageart Surface Mount Surface Mount
MSL-Level 1 (unlimited) 1 (unlimited floor life at <30C/85% RH)
RoHS-Status Compliant Compliant
Lead-Free Yes —
Halogenfrei Yes Yes (per Infineon product family policy)
Channel Mode Enhancement —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr] —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, TC=25C) — 180 A
Power Dissipation (PD, TC=25C) — 250 W
On-Resistance RDS(on) max @ VGS=10V — 2.4 mΩ
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) value]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: Qg total gate charge]
Input Capacitance Ciss — [DATA_NEEDED: Ciss value]
Output Capacitance Coss — [DATA_NEEDED: Coss value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
Packaging — Tape & Reel (13-inch reel)

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