IRF8714TRPBF vs IRLL2705TRPBF Vergleich
Detaillierter Direktvergleich von IRF8714TRPBF von Infineon und IRLL2705TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF8714TRPBF | IRLL2705TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,66 | $0,22 |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET / StrongIRFET (planar MOSFET) | HEXFET (IR MOSFET fifth generation) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 14 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on)) max at VGS=10V | 8.7 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical range] | — |
| Gate Charge (Qg) typical | 8.1 nC | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| Betriebstemperaturbereich | -55C to +150C (junction) | -55 deg C to +175 deg C |
| Gehäuse | SO-8 (8-SOIC) | SOT-223 |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 8 | — |
| Avalanche Rated | Yes | — |
| Lead-Free / RoHS | Lead-Free / RoHS Compliant | — |
| MSL-Level | 1 (per Infineon package qualification) | — |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at 25 deg C | — | 3.8 A |
| Peak Drain Current (IDM, pulsed) | — | 5.2 A |
| RDS(on) max at VGS=10V | — | 40 mOhm |
| Total Gate Charge (Qg) | — | 32 nC |
| Gate Drive Level | — | Logic-Level |
| Power Dissipation at TA=25 deg C | — | 1 W (Ta), 2.1 W (per LCSC listing) |
| Dynamic dv/dt Rating | — | Yes |
| Lead-Free | — | Yes (PBF suffix) |
| RoHS-Status | — | Compliant |