IRF8714TRPBF vs IRLL2705TRPBF Comparison

Detailed side-by-side comparison of IRF8714TRPBF by Infineon and IRLL2705TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLL2705TRPBF IRLL2705TRPBF - 55V N-Channel HEXFET MOSFET | Infineon

IRLL2705TRPBF - 55V N-Channel HEXFET MOSFET | Infineon

IRLL2705TRPBF βœ“ Active

Specification Comparison

Parameter IRF8714TRPBF IRLL2705TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.66 $0.22
FET Type N-Channel N-Channel MOSFET, Metal Oxide
Technology HEXFET / StrongIRFET (planar MOSFET) HEXFET (IR MOSFET fifth generation)
Drain-Source Voltage (VDS) 30 V β€”
Continuous Drain Current (ID) at TA=25C 14 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-State Resistance (RDS(on)) max at VGS=10V 8.7 mΞ© β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical range] β€”
Gate Charge (Qg) typical 8.1 nC β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Power Dissipation (PD) at TA=25C 2.5 W β€”
Operating Temperature Range -55C to +150C (junction) -55 deg C to +175 deg C
Package SO-8 (8-SOIC) SOT-223
Mounting Type Surface Mount Surface Mount
Pin Count 8 β€”
Avalanche Rated Yes β€”
Lead-Free / RoHS Lead-Free / RoHS Compliant β€”
MSL Level 1 (per Infineon package qualification) β€”
Drain-to-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) at 25 deg C β€” 3.8 A
Peak Drain Current (IDM, pulsed) β€” 5.2 A
RDS(on) max at VGS=10V β€” 40 mOhm
Total Gate Charge (Qg) β€” 32 nC
Gate Drive Level β€” Logic-Level
Power Dissipation at TA=25 deg C β€” 1 W (Ta), 2.1 W (per LCSC listing)
Dynamic dv/dt Rating β€” Yes
Lead-Free β€” Yes (PBF suffix)
RoHS Status β€” Compliant

Datasheets & Resources

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