IRF9Z34NPBF vs IRFR5505TRLPBF Vergleich

Detaillierter Direktvergleich von IRF9Z34NPBF von Infineon und IRFR5505TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF9Z34NPBF IRFR5505TRLPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,65 $0,38
Manufacturer Infineon Technologies (formerly International Rectifier) —
Polarity / Channel Type P-Channel —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) at Tc=25C -19 A —
Pulsed Drain Current (Idm) -72 A —
Power Dissipation (Pd) at Tc=25C 68 W —
On-Resistance Rds(on) at Vgs=-10V 100 milliohm (typical) —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical/min/max] —
Gate Charge (Qg) 23.3 nC (per Mouser listing) —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Betriebstemperaturbereich -55C to +175C (junction) -55 °C to +175 °C
Gehäuse TO-220AB (through-hole, 3-pin) TO-252AA (DPAK), surface mount
Montageart Through Hole Surface Mount
Pinout (G-D-S) Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source —
Technology HEXFET (5th generation) IR MOSFET™ (HEXFET® generation 5)
Lead-Free / Halogen-Free Yes (PBF suffix) —
RoHS-Status Compliant —
Polarity — P-Channel
MOSFET Operating Mode — Enhancement
VDS (Drain-Source Voltage) — -55 V
VGS (Gate-Source Voltage) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) — -18 A (Tc)
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) max — 110 mOhm (VGS = -10 V)
Total Gate Charge (Qg) — 21.3 nC
Power Dissipation (PD) — 57 W (Tc = 25 °C)
Thermal Resistance Junction-to-Case (RθJC) — [DATA_NEEDED: RθJC]
Lead-Free / RoHS — Yes (PBF suffix)
MSL-Level — 1

Datenblätter & Ressourcen

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