IRFB4310PBF vs IRLB4030PBF Vergleich

Detaillierter Direktvergleich von IRFB4310PBF von Infineon und IRLB4030PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFB4310PBF IRLB4030PBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,95 $3,10
Transistortyp N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (IR MOSFET) HEXFET (StrongIRFET family)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc=25C 130 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current value]
Maximum Power Dissition (PD) at Tc=25C 300 W —
On-Resistance RDS(on) max at VGS=10V 7 mOhm 4.3 mOhm
On-Resistance RDS(on) typical at VGS=10V 5.6 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS maximum rating] —
Total Gate Charge (Qg) 170 nC 87 nC
Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical] —
Betriebstemperaturbereich -55C to +175C (junction) -55C to +175C
Gehäuse TO-220AB (through-hole) TO-220AB
Montageart Through Hole Through Hole
Avalanche Rated Yes —
RoHS-Status Compliant Compliant
Lead-Free Yes (Pb-free PBF suffix) —
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 180 A
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V]
Power Dissipation (PD) at Tc — 370 W
Logic Level Drive — Yes (optimized for 4.5 V to 10 V VGS)
Qualification — JEDEC

Datenblätter & Ressourcen

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