IRFB7545PBF vs IRFZ48NPBF Vergleich

Detaillierter Direktvergleich von IRFB7545PBF von Infineon und IRFZ48NPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFB7545PBF IRFZ48NPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,95 $0,65
Manufacturer Infineon Technologies —
Part Number IRFB7545PBF —
Technology StrongIRFET™ (HEXFET, N-Channel) HEXFET (advanced planar)
Polarity N-Channel —
VDS (Drain-Source Voltage) max 60 V —
VGS (Gate-Source Voltage) max ±20 V —
RDS(on) max at VGS=10V 5.9 mOhm —
Continuous Drain Current (ID) at Tc=25C 95 A —
Pulsed Drain Current (IDM) 380 A [DATA_NEEDED: pulsed drain current]
Single-Pulse Avalanche Current (IAS) 57 A —
Power Dissipation (PD) at Tc=25C 125 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
Betriebs-Sperrschichttemperatur -55C to +175C -55C to +175C
Gehäuse TO-220AB (Through-Hole) TO-220AB (through-hole)
Montageart Through Hole (THT) Through Hole
Lead-Free / RoHS Yes (Lead-Free, PBF suffix) —
MSL-Level N/A (Through-Hole) —
Gate Drive Voltage (typical) 10 V —
Avalanche Energy Rated Yes —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC — 64 A
Gate-to-Source Voltage (VGS) — ±20 V
On-Resistance (RDS(on)) at VGS=10V — 14 mΩ (maximum)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — 54 nC
Power Dissipation (PD) at TC — 130 W
Lead-Free (PBF suffix) — Yes
RoHS-Status — Compliant
Qualification Standard — Industrial market

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