IRFB7545PBF vs IRFZ48NPBF 对比

详细并排对比 IRFB7545PBF 出自 Infineon 和 IRFZ48NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFZ48NPBF IRFZ48NPBF - 55V 64A N-Channel HEXFET MOSFET TO-220

IRFZ48NPBF - 55V 64A N-Channel HEXFET MOSFET TO-220

IRFZ48NPBF ✓ 量产中

规格对比

参数 IRFB7545PBF IRFZ48NPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.95 $0.65
Manufacturer Infineon Technologies —
Part Number IRFB7545PBF —
Technology StrongIRFET™ (HEXFET, N-Channel) HEXFET (advanced planar)
Polarity N-Channel —
VDS (Drain-Source Voltage) max 60 V —
VGS (Gate-Source Voltage) max ±20 V —
RDS(on) max at VGS=10V 5.9 mOhm —
Continuous Drain Current (ID) at Tc=25C 95 A —
Pulsed Drain Current (IDM) 380 A [DATA_NEEDED: pulsed drain current]
Single-Pulse Avalanche Current (IAS) 57 A —
Power Dissipation (PD) at Tc=25C 125 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
工作结温 -55C to +175C -55C to +175C
封装 TO-220AB (Through-Hole) TO-220AB (through-hole)
安装类型 Through Hole (THT) Through Hole
Lead-Free / RoHS Yes (Lead-Free, PBF suffix) —
MSL 等级 N/A (Through-Hole) —
Gate Drive Voltage (typical) 10 V —
Avalanche Energy Rated Yes —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC — 64 A
Gate-to-Source Voltage (VGS) — ±20 V
On-Resistance (RDS(on)) at VGS=10V — 14 mΩ (maximum)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — 54 nC
Power Dissipation (PD) at TC — 130 W
Lead-Free (PBF suffix) — Yes
RoHS 状态 — Compliant
Qualification Standard — Industrial market

数据手册与资源

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