IRFB7545PBF vs IRFZ48NPBF Сравнение
Подробное сравнение бок о бок IRFB7545PBF от Infineon и IRFZ48NPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRFB7545PBF | IRFZ48NPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,95 | $0,65 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFB7545PBF | — |
| Technology | StrongIRFET™ (HEXFET, N-Channel) | HEXFET (advanced planar) |
| Polarity | N-Channel | — |
| VDS (Drain-Source Voltage) max | 60 V | — |
| VGS (Gate-Source Voltage) max | ±20 V | — |
| RDS(on) max at VGS=10V | 5.9 mOhm | — |
| Continuous Drain Current (ID) at Tc=25C | 95 A | — |
| Pulsed Drain Current (IDM) | 380 A | [DATA_NEEDED: pulsed drain current] |
| Single-Pulse Avalanche Current (IAS) | 57 A | — |
| Power Dissipation (PD) at Tc=25C | 125 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | — |
| Рабочая температура перехода | -55C to +175C | -55C to +175C |
| Корпус | TO-220AB (Through-Hole) | TO-220AB (through-hole) |
| Тип монтажа | Through Hole (THT) | Through Hole |
| Lead-Free / RoHS | Yes (Lead-Free, PBF suffix) | — |
| Уровень MSL | N/A (Through-Hole) | — |
| Gate Drive Voltage (typical) | 10 V | — |
| Avalanche Energy Rated | Yes | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC | — | 64 A |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| On-Resistance (RDS(on)) at VGS=10V | — | 14 mΩ (maximum) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | 54 nC |
| Power Dissipation (PD) at TC | — | 130 W |
| Lead-Free (PBF suffix) | — | Yes |
| Статус RoHS | — | Compliant |
| Qualification Standard | — | Industrial market |