IRFH5020TRPBF vs IRF7469TRPBF Vergleich

Detaillierter Direktvergleich von IRFH5020TRPBF von Infineon und IRF7469TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFH5020TRPBF IRF7469TRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,36 $0,37
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Family HEXFET Power MOSFET —
FET Type MOSFET N-Channel, Metal Oxide N-Channel
Configuration Single with built-in diode —
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TA=25°C 5.1 A —
Pulsed Drain Current (IDM) 63 A —
Gate-to-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=10V 55 mΩ —
Gate Charge (Qg) typ 11 nC —
Power Dissipation (TA=25°C) 3.6 W —
Verlustleistung (TC=25°C) 8.3 W —
Thermal Resistance, Junction-to-PCB (RthJB) 0.8 °C/W —
Package Type 8-PQFN (5x6 mm) SuperSO8 —
Montageart Surface Mount Surface Mount
Profile Height ≤ 0.9 mm —
Betriebstemperaturbereich -55 °C to +150 °C (TJ max) -55°C to +150°C (Tj)
Qualification Standard JEDEC (Normal level) —
Gate Drive Optimization 10 V VGS —
RoHS Compliance Compliant (Pb-free suffix PBF) —
MSL-Level 1 (per industry standard for PQFN-8) 1 (unlimited)
Technology — IR MOSFET™ (HEXFET)
Drain-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) at TA=25°C — 9 A
Rds(on) Max at Vgs=10V — 17 mΩ
Total Gate Charge (Qg) — 15 nC
Gate-Source Voltage (Vgs) Max — ±20 V
Power Dissipation (Pd) at TA=25°C — 2.5 W
Gehäuse — 8-SO (SOIC-8)
RoHS-Status — Compliant
Lead-Free — Yes
Halogenfrei — Yes
Channel Mode — Enhancement
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]

Datenblätter & Ressourcen

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