IRFH5020TRPBF vs IRF7469TRPBF Comparison

Detailed side-by-side comparison of IRFH5020TRPBF by Infineon and IRF7469TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFH5020TRPBF IRF7469TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Family HEXFET Power MOSFET —
FET Type MOSFET N-Channel, Metal Oxide N-Channel
Configuration Single with built-in diode —
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TA=25°C 5.1 A —
Pulsed Drain Current (IDM) 63 A —
Gate-to-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=10V 55 mΩ —
Gate Charge (Qg) typ 11 nC —
Power Dissipation (TA=25°C) 3.6 W —
Power Dissipation (TC=25°C) 8.3 W —
Thermal Resistance, Junction-to-PCB (RthJB) 0.8 °C/W —
Package Type 8-PQFN (5x6 mm) SuperSO8 —
Mounting Type Surface Mount Surface Mount
Profile Height ≤ 0.9 mm —
Operating Temperature Range -55 °C to +150 °C (TJ max) -55°C to +150°C (Tj)
Qualification Standard JEDEC (Normal level) —
Gate Drive Optimization 10 V VGS —
RoHS Compliance Compliant (Pb-free suffix PBF) —
MSL Level 1 (per industry standard for PQFN-8) 1 (unlimited)
Technology — IR MOSFET™ (HEXFET)
Drain-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) at TA=25°C — 9 A
Rds(on) Max at Vgs=10V — 17 mΩ
Total Gate Charge (Qg) — 15 nC
Gate-Source Voltage (Vgs) Max — ±20 V
Power Dissipation (Pd) at TA=25°C — 2.5 W
Package — 8-SO (SOIC-8)
RoHS Status — Compliant
Lead-Free — Yes
Halogen Free — Yes
Channel Mode — Enhancement
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]

Datasheets & Resources

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