IRFH7084TRPBF vs IRF7469TRPBF Vergleich
Detaillierter Direktvergleich von IRFH7084TRPBF von Infineon und IRF7469TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFH7084TRPBF | IRF7469TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,45 | $0,37 |
| FET Type | N-Channel | N-Channel |
| Technology | StrongIRFET™ (trench MOSFET) | IR MOSFET™ (HEXFET) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25°C, package-limited) | 100 A | — |
| Silicon-Limited Drain Current | 265 A | — |
| Power Dissipation (PD, Tc=25°C) | 156 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.25 mΩ | — |
| On-Resistance RDS(on) typ @ VGS=10V | 0.95 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage VGS(th) typ | 1.7 V to 2.7 V | — |
| Input Capacitance (Ciss) max @ 25V | 6560 pF | — |
| Betriebstemperaturbereich | -55°C to +175°C (TJ) | -55°C to +150°C (Tj) |
| Gehäuse | 8-PQFN 5x6 mm (SuperSO8) | 8-SO (SOIC-8) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 | 1 (unlimited) |
| RoHS-Status | Compliant | Compliant |
| Halogenfrei | Compliant | — |
| RthJC max | 0.96 °C/W (per datasheet) | — |
| Drain-Source Voltage (Vdss) | — | 40 V |
| Continuous Drain Current (Id) at TA=25°C | — | 9 A |
| Rds(on) Max at Vgs=10V | — | 17 mΩ |
| Total Gate Charge (Qg) | — | 15 nC |
| Gate-Source Voltage (Vgs) Max | — | ±20 V |
| Power Dissipation (Pd) at TA=25°C | — | 2.5 W |
| Lead-Free | — | Yes |
| Halogenfrei | — | Yes |
| Channel Mode | — | Enhancement |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |