IRFH7084TRPBF vs IRFR4615TRLPBF Vergleich
Detaillierter Direktvergleich von IRFH7084TRPBF von Infineon und IRFR4615TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFH7084TRPBF | IRFR4615TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,45 | $0,39 |
| FET Type | N-Channel | — |
| Technology | StrongIRFET™ (trench MOSFET) | IR MOSFET (N-Channel Enhancement Mode) |
| Drain-Source Voltage (VDS) | 40 V | 150 V |
| Continuous Drain Current (ID, Tc=25°C, package-limited) | 100 A | — |
| Silicon-Limited Drain Current | 265 A | — |
| Power Dissipation (PD, Tc=25°C) | 156 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.25 mΩ | — |
| On-Resistance RDS(on) typ @ VGS=10V | 0.95 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage VGS(th) typ | 1.7 V to 2.7 V | — |
| Input Capacitance (Ciss) max @ 25V | 6560 pF | — |
| Betriebstemperaturbereich | -55°C to +175°C (TJ) | -55C to +175C |
| Gehäuse | 8-PQFN 5x6 mm (SuperSO8) | TO-252AA (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 | — |
| RoHS-Status | Compliant | — |
| Halogenfrei | Compliant | — |
| RthJC max | 0.96 °C/W (per datasheet) | — |
| Continuous Drain Current (ID) at TC=25C | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 42 mOhm |
| Total Gate Charge (Qg) | — | 26 nC |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Power Dissipation (PD) at TC=25C | — | 144 W |
| Avalanche Energy (EAS) | — | 109 mJ |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates Pb-free) |
| Einzelpuls-Avalanche-Energie | — | 109 mJ |