IRFH7440TRPBF vs BSC050N04LSGATMA1 Vergleich
Detaillierter Direktvergleich von IRFH7440TRPBF von Infineon und BSC050N04LSGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFH7440TRPBF | BSC050N04LSGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,41 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 85 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current IDM] |
| On-Resistance (RDS(on) max at VGS=10V) | 2.4 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Total Gate Charge (Qg) | 92 nC | — |
| Power Dissipation (PD, Tc=25°C) | 104 W | — |
| Betriebs-Sperrschichttemperatur | -55°C to +150°C | — |
| Technology | StrongIRFET™ (HEXFET) | OptiMOS 3 (trench MOSFET) |
| Gehäuse | 8-PQFN (5x6 mm) with exposed thermal pad | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Gate Drive Optimization | 10V (Normal Level), switching < 100 kHz | — |
| Qualification | JEDEC standard | — |
| Lead-Free / RoHS | Lead-Free, RoHS Compliant (PBF suffix) | — |
| MSL (Moisture Sensitivity Level) | MSL 1 | — |
| Typical Applications | Brushed motor drive, DC-DC converters, solenoid/load switching | — |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Betriebstemperaturbereich | — | -55C to +150C |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |
| RoHS-Status | — | Compliant |
| MSL-Level | — | 1 |