IRFL024ZTRPBF vs IRLL2705TRPBF Vergleich
Detaillierter Direktvergleich von IRFL024ZTRPBF von Infineon und IRLL2705TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFL024ZTRPBF | IRLL2705TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,26 | $0,22 |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET fifth generation) |
| Drain-Source Voltage (Vds) | 55 V | — |
| Continuous Drain Current (Id) at Ta=25C | 5.1 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Rds(on) Max at Vgs=10V | 57.5 mOhm | — |
| Gate Charge (Qg) Typ | 9.1 nC | — |
| Gate-Source Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| Power Dissipation (Pd) at Ta=25C | 1 W | — |
| Betriebstemperaturbereich | -55C to +150C | -55 deg C to +175 deg C |
| Gehäuse | SOT-223 | SOT-223 |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (+ drain tab) | — |
| MSL-Level | 1 | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | Yes (PBF suffix) |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at 25 deg C | — | 3.8 A |
| Peak Drain Current (IDM, pulsed) | — | 5.2 A |
| RDS(on) max at VGS=10V | — | 40 mOhm |
| Total Gate Charge (Qg) | — | 32 nC |
| Gate Drive Level | — | Logic-Level |
| Power Dissipation at TA=25 deg C | — | 1 W (Ta), 2.1 W (per LCSC listing) |
| Dynamic dv/dt Rating | — | Yes |