IRFP1405PBF vs IRFB3207ZPBF Vergleich
Detaillierter Direktvergleich von IRFP1405PBF von Infineon und IRFB3207ZPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFP1405PBF | IRFB3207ZPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,92 | $1,62 |
| FET Type | N-Channel | — |
| Technology | HEXFET (Planar cell) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-to-Source Voltage (V_DSS) | 55 V | — |
| Continuous Drain Current (I_D) at Tc=25°C | 95 A | — |
| Continuous Drain Current (I_D) at Tc=100°C | [DATA_NEEDED: I_D at Tc=100°C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) at VGS=10V | 5.3 mΩ (typical per distributor listing) | — |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) typical] | — |
| Maximum Power Dissition at Tc=25°C | 310 W | — |
| Maximum Junction Temperature | 175 °C | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | — |
| Gehäuse | TO-247AC (through-hole) | TO-220AB (3-lead through-hole) |
| Montageart | Through Hole | Through Hole |
| Pin-Anzahl | 3 (Gate, Drain, Source) | — |
| RoHS-Status | Compliant (Pb-free suffix PBF) | — |
| Qualification | JEDEC standard (industrial grade) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| MSL-Level | — | N/A (through-hole) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |