IRFP1405PBF vs IRFB3207ZPBF 比較

詳細な並列比較: IRFP1405PBF メーカー: Infineon および IRFB3207ZPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

仕様比較

パラメータ IRFP1405PBF IRFB3207ZPBF
ブランド Infineon Infineon
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $1.92 $1.62
FET Type N-Channel —
Technology HEXFET (Planar cell) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Drain-to-Source Voltage (V_DSS) 55 V —
Continuous Drain Current (I_D) at Tc=25°C 95 A —
Continuous Drain Current (I_D) at Tc=100°C [DATA_NEEDED: I_D at Tc=100°C] —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R_DS(on) at VGS=10V 5.3 mΩ (typical per distributor listing) —
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: V_GS(th) typical] —
Maximum Power Dissition at Tc=25°C 310 W —
Maximum Junction Temperature 175 °C —
動作温度範囲 -55 °C to +175 °C —
パッケージ TO-247AC (through-hole) TO-220AB (3-lead through-hole)
実装タイプ Through Hole Through Hole
ピン数 3 (Gate, Drain, Source) —
RoHS ステータス Compliant (Pb-free suffix PBF) —
Qualification JEDEC standard (industrial grade) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRFB3207ZPBF
Series — HEXFET
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
動作接合温度 — -55 C to +175 C
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
MSLレベル — N/A (through-hole)
Avalanche Rated — Yes (improved Z-variant ruggedness)

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