IRFP1405PBF vs IRFB3207ZPBF Comparación
Comparación detallada lado a lado de IRFP1405PBF por Infineon y IRFB3207ZPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFP1405PBF | IRFB3207ZPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,92 | $1,62 |
| FET Type | N-Channel | — |
| Technology | HEXFET (Planar cell) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-to-Source Voltage (V_DSS) | 55 V | — |
| Continuous Drain Current (I_D) at Tc=25°C | 95 A | — |
| Continuous Drain Current (I_D) at Tc=100°C | [DATA_NEEDED: I_D at Tc=100°C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) at VGS=10V | 5.3 mΩ (typical per distributor listing) | — |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) typical] | — |
| Maximum Power Dissition at Tc=25°C | 310 W | — |
| Maximum Junction Temperature | 175 °C | — |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | TO-247AC (through-hole) | TO-220AB (3-lead through-hole) |
| Tipo de montaje | Through Hole | Through Hole |
| Recuento de pines | 3 (Gate, Drain, Source) | — |
| Estado RoHS | Compliant (Pb-free suffix PBF) | — |
| Qualification | JEDEC standard (industrial grade) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Nivel MSL | — | N/A (through-hole) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |