IRFP2907PBF vs IRF1405PBF Vergleich
Detaillierter Direktvergleich von IRFP2907PBF von Infineon und IRF1405PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFP2907PBF | IRF1405PBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,45 | $1,42 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRFP2907PBF | — |
| Technology | HEXFET Stripe Planar DMOS (N-Channel) | HEXFET (Stripe Planar cell structure) |
| Drain-to-Source Voltage (V_DSS) | 75 V | — |
| Continuous Drain Current (I_D) at T_C = 25 C | 209 A | — |
| Static Drain-to-Source On-Resistance (R_DS(on)) | 4.5 mOhm at V_GS = 10 V | — |
| Power Dissipation (P_D) at T_C = 25 C | 470 W | — |
| Total Gate Charge (Q_g) | 410 nC | — |
| Maximum Junction Operating Temperature | +175 C | — |
| Package / Mounting Type | TO-247AC (Through Hole) | — |
| Pin-Anzahl | 3 (Gate, Drain, Source) | — |
| RoHS Compliance | Yes (Pb-free) | — |
| Avalanche Rated | Yes (repetitive avalanche rated) | — |
| Body Diode | Integral (no external anti-parallel diode required) | — |
| Lead-Free | Yes | — |
| Part Number Suffix | — | PbF (lead-free, RoHS compliant) |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 55 V |
| Continuous Drain Current (I_D, Tc=25C) | — | 169 A |
| Continuous Drain Current (I_D, Tc=100C) | — | [DATA_NEEDED: I_D at Tc=100C] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current rating] |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 330 W |
| R_DS(on) Maximum | — | 5.3 mOhm @ V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | — | 2.0 V to 4.0 V |
| Maximum Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: maximum V_GS rating] |
| Operating Junction Temperature (T_J max) | — | 175 C |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| Gehäuse | — | TO-220AB (through-hole) |
| Montageart | — | Through Hole |
| Qualification | — | JEDEC qualified, optimized for switching below 100 kHz |
| RoHS-Status | — | PbF suffix indicates lead-free / RoHS compliant |
| Single Pulse Avalanche Energy (E_AS) | — | [DATA_NEEDED: avalanche energy rating] |
| Thermal Resistance Junction-to-Case (R_theta_JC) | — | [DATA_NEEDED: thermal resistance R_theta_JC] |