IRFP2907PBF vs IRF1405PBF 对比

详细并排对比 IRFP2907PBF 出自 Infineon 和 IRF1405PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFP2907PBF IRF1405PBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.45 $1.42
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRFP2907PBF —
Technology HEXFET Stripe Planar DMOS (N-Channel) HEXFET (Stripe Planar cell structure)
Drain-to-Source Voltage (V_DSS) 75 V —
Continuous Drain Current (I_D) at T_C = 25 C 209 A —
Static Drain-to-Source On-Resistance (R_DS(on)) 4.5 mOhm at V_GS = 10 V —
Power Dissipation (P_D) at T_C = 25 C 470 W —
Total Gate Charge (Q_g) 410 nC —
Maximum Junction Operating Temperature +175 C —
Package / Mounting Type TO-247AC (Through Hole) —
引脚数量 3 (Gate, Drain, Source) —
RoHS Compliance Yes (Pb-free) —
Avalanche Rated Yes (repetitive avalanche rated) —
Body Diode Integral (no external anti-parallel diode required) —
Lead-Free Yes —
Part Number Suffix — PbF (lead-free, RoHS compliant)
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 55 V
Continuous Drain Current (I_D, Tc=25C) — 169 A
Continuous Drain Current (I_D, Tc=100C) — [DATA_NEEDED: I_D at Tc=100C]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current rating]
Maximum Power Dissipation (P_D, Tc=25C) — 330 W
R_DS(on) Maximum — 5.3 mOhm @ V_GS = 10 V
Gate Threshold Voltage (V_GS(th)) — 2.0 V to 4.0 V
Maximum Gate-Source Voltage (V_GS) — [DATA_NEEDED: maximum V_GS rating]
Operating Junction Temperature (T_J max) — 175 C
Storage Temperature Range — [DATA_NEEDED: storage temperature range]
封装 — TO-220AB (through-hole)
安装类型 — Through Hole
Qualification — JEDEC qualified, optimized for switching below 100 kHz
RoHS 状态 — PbF suffix indicates lead-free / RoHS compliant
Single Pulse Avalanche Energy (E_AS) — [DATA_NEEDED: avalanche energy rating]
Thermal Resistance Junction-to-Case (R_theta_JC) — [DATA_NEEDED: thermal resistance R_theta_JC]

数据手册与资源

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