IRFP2907PBF vs IRF1405PBF Сравнение
Подробное сравнение бок о бок IRFP2907PBF от Infineon и IRF1405PBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRFP2907PBF | IRF1405PBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,45 | $1,42 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRFP2907PBF | — |
| Technology | HEXFET Stripe Planar DMOS (N-Channel) | HEXFET (Stripe Planar cell structure) |
| Drain-to-Source Voltage (V_DSS) | 75 V | — |
| Continuous Drain Current (I_D) at T_C = 25 C | 209 A | — |
| Static Drain-to-Source On-Resistance (R_DS(on)) | 4.5 mOhm at V_GS = 10 V | — |
| Power Dissipation (P_D) at T_C = 25 C | 470 W | — |
| Total Gate Charge (Q_g) | 410 nC | — |
| Maximum Junction Operating Temperature | +175 C | — |
| Package / Mounting Type | TO-247AC (Through Hole) | — |
| Число выводов | 3 (Gate, Drain, Source) | — |
| RoHS Compliance | Yes (Pb-free) | — |
| Avalanche Rated | Yes (repetitive avalanche rated) | — |
| Body Diode | Integral (no external anti-parallel diode required) | — |
| Lead-Free | Yes | — |
| Part Number Suffix | — | PbF (lead-free, RoHS compliant) |
| Тип транзистора | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 55 V |
| Continuous Drain Current (I_D, Tc=25C) | — | 169 A |
| Continuous Drain Current (I_D, Tc=100C) | — | [DATA_NEEDED: I_D at Tc=100C] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current rating] |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 330 W |
| R_DS(on) Maximum | — | 5.3 mOhm @ V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | — | 2.0 V to 4.0 V |
| Maximum Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: maximum V_GS rating] |
| Operating Junction Temperature (T_J max) | — | 175 C |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| Корпус | — | TO-220AB (through-hole) |
| Тип монтажа | — | Through Hole |
| Qualification | — | JEDEC qualified, optimized for switching below 100 kHz |
| Статус RoHS | — | PbF suffix indicates lead-free / RoHS compliant |
| Single Pulse Avalanche Energy (E_AS) | — | [DATA_NEEDED: avalanche energy rating] |
| Thermal Resistance Junction-to-Case (R_theta_JC) | — | [DATA_NEEDED: thermal resistance R_theta_JC] |