IRFP2907PBF vs IRF7769L1TRPBF Vergleich

Detaillierter Direktvergleich von IRFP2907PBF von Infineon und IRF7769L1TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFP2907PBF IRF7769L1TRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,45 $1,72
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRFP2907PBF —
Technology HEXFET Stripe Planar DMOS (N-Channel) HEXFET (IR MOSFET)
Drain-to-Source Voltage (V_DSS) 75 V —
Continuous Drain Current (I_D) at T_C = 25 C 209 A —
Static Drain-to-Source On-Resistance (R_DS(on)) 4.5 mOhm at V_GS = 10 V —
Power Dissipation (P_D) at T_C = 25 C 470 W —
Total Gate Charge (Q_g) 410 nC —
Maximum Junction Operating Temperature +175 C —
Package / Mounting Type TO-247AC (Through Hole) —
Pin-Anzahl 3 (Gate, Drain, Source) —
RoHS Compliance Yes (Pb-free) Compliant
Avalanche Rated Yes (repetitive avalanche rated) —
Body Diode Integral (no external anti-parallel diode required) —
Lead-Free Yes —
Polarity — N-Channel
VDS (Drain-Source Voltage) — 100 V
VGS (Gate-Source Voltage) — ±20 V
Continuous Drain Current (TA=25C) — 20 A
Continuous Drain Current (TC=25C) — 124 A
Gepulster Drain-Strom — 142 A
Power Dissipation (TA=25C) — 3.3 W
Power Dissipation (TC=25C) — 125 W
RDS(on) max at VGS=10V — 3.5 mOhm
RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th)]
Total Gate Charge Qg — 200 nC
Gehäuse — DirectFET Isometric L8
Package Profile — 0.7 mm
Montageart — Surface Mount
Betriebstemperaturbereich — -55C to +150C (TJ)
MSL-Level — 1
Lead-Free Reflow — 260C qualified
Halogenfrei — Yes

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