IRFP2907PBF vs IRF7769L1TRPBF 对比
详细并排对比 IRFP2907PBF 出自 Infineon 和 IRF7769L1TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFP2907PBF | IRF7769L1TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.45 | $1.72 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFP2907PBF | — |
| Technology | HEXFET Stripe Planar DMOS (N-Channel) | HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (V_DSS) | 75 V | — |
| Continuous Drain Current (I_D) at T_C = 25 C | 209 A | — |
| Static Drain-to-Source On-Resistance (R_DS(on)) | 4.5 mOhm at V_GS = 10 V | — |
| Power Dissipation (P_D) at T_C = 25 C | 470 W | — |
| Total Gate Charge (Q_g) | 410 nC | — |
| Maximum Junction Operating Temperature | +175 C | — |
| Package / Mounting Type | TO-247AC (Through Hole) | — |
| 引脚数量 | 3 (Gate, Drain, Source) | — |
| RoHS Compliance | Yes (Pb-free) | Compliant |
| Avalanche Rated | Yes (repetitive avalanche rated) | — |
| Body Diode | Integral (no external anti-parallel diode required) | — |
| Lead-Free | Yes | — |
| Polarity | — | N-Channel |
| VDS (Drain-Source Voltage) | — | 100 V |
| VGS (Gate-Source Voltage) | — | ±20 V |
| Continuous Drain Current (TA=25C) | — | 20 A |
| Continuous Drain Current (TC=25C) | — | 124 A |
| 脉冲漏极电流 | — | 142 A |
| Power Dissipation (TA=25C) | — | 3.3 W |
| Power Dissipation (TC=25C) | — | 125 W |
| RDS(on) max at VGS=10V | — | 3.5 mOhm |
| RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge Qg | — | 200 nC |
| 封装 | — | DirectFET Isometric L8 |
| Package Profile | — | 0.7 mm |
| 安装类型 | — | Surface Mount |
| 工作温度范围 | — | -55C to +150C (TJ) |
| MSL 等级 | — | 1 |
| Lead-Free Reflow | — | 260C qualified |
| 无卤 | — | Yes |